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Official data from INPI

GEMAS FORMADAS DE CARBONETO DE SILÍCIO COM REVESTIMENTO DE DIAMANTE

ArquivadaInvention PatentPCT · US1997021331

Application data

Number

PI9713512

Type

Invention Patent

Filing

11/14/1997

Publication

02/29/2000

PCT

US1997021331

Progress at the INPI

  1. Filing11/14/97
  2. Publication02/29/00
  3. Abandoned
  4. Allowance
  5. Grant
  6. In force

The application was abandoned: the INPI technical office action was not answered in time (art. 36 of the Brazilian IP Act). The technology is in the public domain in Brazil.

Talk to a specialist

Latest action published by the INPI: 01/04/2005. We update with every new RPI gazette, published weekly.

Applicants and inventors

Applicants

C3, Inc.

US

Inventors

C. H. (pessoa física)

US

K. N. (pessoa física)

US

T. C. (pessoa física)

US

Technical data

Priority claims

US

751098 · 11/15/1996

Abstract

Patente de Invenção: "GEMAS FORMADAS DE CARBONETO DE SILÍCIO COM REVESTIMENTO DE DIAMANTE" . Gemas sintéticas são produzidas crescendo-se mono cristais de carboneto de silício, formando o carboneto de silício em núcleos de gema, e depois depositando um fino revestimento de diamante sobre o núcleo.

Prosecution history

Publications in the Brazilian Industrial Property Gazette (RPI).

Arquivamento - Art. 36 §1° da LPI

#11.2

01/04/2005

RPI 1774

Exigência - art. 36 da LPI

#6.1

06/01/2004

RPI 1743

Notificação de entrada na fase nacional - PCT

#1.3

02/29/2000

RPI 1521

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