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Official data from INPI

ARQUITETURA DE DISPOSITIVO DE ALTA TENSÃO PARA O PROCESSO SUBMÍCRON

ArquivadaInvention Patent
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Application data

Number

PI9907506

Type

Invention Patent

Filing

12/22/1999

Publication

10/03/2000
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Progress at the INPI

  1. Filing12/22/99
  2. Publication10/03/00
  3. Abandoned
  4. Allowance
  5. Grant
  6. In force

The application was abandoned: examination was not requested within the 36 months following the 12/22/1999 filing, the deadline set by art. 33 of the Brazilian IP Act. The technology is in the public domain in Brazil.

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Latest action published by the INPI: 07/20/2004. We update with every new RPI gazette, published weekly.

Applicants and inventors

Applicants

X. C. (pessoa física)

US

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Inventors

A. E. (pessoa física)

US

Technical data

IPC Classification

H01L 29/735

Priority claims

UA

09/220,967 · 12/23/1998

Abstract

Patente de Invenção: "ARQUITETURA DE DISPOSITIVO DE ALTA TENSÃO PARA O PROCESSO SUBMÍCRON" . Um transistor MOS submícron, que tem uma alta tensão de ruptura. O transistor MOS tem duas regiões de depleção fundindo que causam ao contorno eqüipotencial se curvar na direção da difusão de drenagem para formar o efeito quasi-RESURF.

Prosecution history

Publications in the Brazilian Industrial Property Gazette (RPI).

Arquivamento definitivo - Art. 33 da LPI

#11.1.1

07/20/2004

RPI 1750

Arquivamento - Art. 33 da LPI

#11.1

12/02/2003

RPI 1717

Publicação do pedido de patente

#3.1

10/03/2000

RPI 1552

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