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Official data from INPI

LIMITADOR DE TENSÃO COM PROTEÇÃO CONTRA SOBRECARGA.

ConcedidaInvention PatentPCT · IB2018051751

Application data

Number

112019018413

Type

Invention Patent

Filing

03/15/2018

Publication

04/07/2020

PCT

IB2018051751

Progress at the INPI

  1. Filing03/15/18
  2. Publication04/07/20
  3. Examination
  4. Allowance07/16/24
  5. Grant09/10/24
  6. In force03/15/38

The patent was granted on 09/10/2024 and is in force until 03/15/2038. Until then, no one may make, use or sell the invention in Brazil without the owner's authorisation.

Protection valid until:03/15/2038

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Latest action published by the INPI: 09/10/2024. We update with every new RPI gazette, published weekly.

Applicants and inventors

Applicants

S. S. (pessoa física)

CZ

Inventors

B. P. (pessoa física)

CZ

R. J. (pessoa física)

CZ

S. J. (pessoa física)

CZ

Technical data

IPC Classification

Priority claims

CZ

PV 2017-143 · 03/15/2017

Abstract

Name of the invention: Voltage limiter with overvoltage protectionThe submitted voltage limiter consists of the insulating shell (26), closed from the top by the electrically and thermally conductivefirst contact plate (2) provided with the first connecting point (1) and from the bottom by the electrically and thermally conductive second contact plate (10) provided with the second connecting point (9). The embodiment of the two triggering semiconductor elements (5,13) oriented in opposing directionsand the protection member (17) connected to it in parallel, located between the two inner plates (3, 11), is located inside the insulating shell (26). The semiconductor elements (5, 13) are simultaneously interconnected with the electronic control device and connecting points (1, 9). The limiter is equipped with compressive construction to provide clamping and electrical interconnection of individual parts. The first triggering semiconductor element (5) is located between the thermally and electrically conductive first inner plate (3), which is in contact with its cathode (7) and the first contact plate (2), which is in contact with its anode (6). The second triggering semiconductor element (13) is located between the thermally and electrically conductive second inner plate (11), which is in contact with its cathode (15) and the second contact plate (10), which is in contact with its anode (14).The electronic control device may be located outside or inside the insulating shell (26) and consists of the first control device (4) interconnected with the control electrode (8) of the first triggering semiconductor element (5), the first contact plate (2) and the first inner plate (3) and interconnected with the control electrode (16) of the second triggering semiconductor element (13), with the second contact plate (10) and the second inner plate (11) from the second control device (12).

Prosecution history

Publications in the Brazilian Industrial Property Gazette (RPI).

Concessão da patente

#16.1

Prazo de Validade: 20 (vinte) anos contados a partir de 15/03/2018, observadas as condições legais

09/10/2024

RPI 2801

Deferimento

#9.1

07/16/2024

RPI 2793

Exigência - art. 36 da LPI

#6.1

04/02/2024

RPI 2778

Parecer de pré-exame

#6.23

09/13/2022

RPI 2697

Adição na publicação

#15.35

10/19/2021

RPI 2650

Notificação de entrada na fase nacional - PCT

#1.3

04/07/2020

RPI 2570

Alteração de dados cadastrais

#1.1

09/17/2019

RPI 2541

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